unisonic technologies co., ltd 9014 npn silicon transistor www.unisonic.com.tw 1 of 3 copyright ? 2008 unisonic technologies co., ltd qw-r201-031.b pre-amplifier, low level & low noise ? features * high total power dissipation. (450mw) * excellent h fe linearity. * complementary to utc 9015 *pb-free plating product number: 9014l ? ordering information ordering number pin assignment normal lead free plating package 1 2 3 packing 9014-x-t92-b 9014l-x-t92-b to-92 e b c tape box 9014-x-t92-k 9014l-x-t92-k to-92 e b c bulk
9014 npn silicon transistor unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r201-031.b ? absolute maximum ratings (ta=25 , unless otherwise specified) parameter symbol ratings unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 45 v emitter-base voltage v ebo 5 v collector current i c 100 ma collector dissipation p c 450 mw junction temperature t j +150
storage temperature t stg -55 ~ +150
note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (ta=25 , unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo i c =100 a, i e =0 50 v collector-emitter breakdown voltage bv ceo i c =1ma, i b =0 45 v emitter-base breakdown voltage bv ebo i e =100 a, i c =0 5 v collector cut-off current i cbo v cb =50v, i e =0 50 na emitter cut-off current i ebo v eb =5v, i c =0 100 na dc current gain h fe v ce =5v, i c =1ma 60 280 1000 collector-emitter satu ration voltage v ce(sat) i c =100ma, i b =5ma 0.14 0.3 v base-emitter satura tion voltage v be(sat) i c =100ma, i b =5ma 0.84 1.0 v base-emitter on voltage v be(on) v ce =5v, i c =2ma 0.58 0.63 0.7 v output capacitance c ob v cb =10v, i e =0, f=1mhz 2.2 3.5 pf current gain-bandwidth porduct f t v ce =5v, i c =10ma 150 270 mhz noise figure nf v ce =5v, i c =0.2ma f=1khz, r s =2k ? 0.9 10 db ? classification of h fe rank a b c d range 60-150 100-300 200-600 400-1000
9014 npn silicon transistor unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r201-031.b ? typical characteristics i b =160a i b =140a i b =120a i b =100a i b =80a 0 1020 304050 0 20 40 60 80 100 static characteristic collector current , i c (ma) collector-emitter voltage, v ce (v) 15 3 100 1000 10 30 1000 dc current gain dc current gain, h fe collector current, i c (ma) 100 500 10 30 50 70 90 i b =60a 50 10 30 50 300 i b =40a i b =20a 300 v ce =5v 110 5 50 300 10 30 1000 base-emitter satu ration voltage collector-emitter sa turation voltage saturation voltage, v be(sat) , v ce(sat) , (mv) collector current, i c (ma) 30 100 50 500 110 50 300 10 100 300 1000 current gain-bandwidth product current gain-bandwidth product, f t (mhz) collector or current, i c (ma) 30 100 500 50 30 3 5 1000 100 300 3 1000 v ce =5v v be(sat) v ce(sat) i c =20i b utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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